{"product_id":"mosfet-12n60-600v-12a-mosfet-n-channel-transistor-new-original","title":"Mosfet 12n60 600v 12a Mosfet N-channel Transistor ( used )","description":"\u003cp\u003eThese 12N60 N-Channel Power Mosfet, 600V, 0.8  field-effect transistors (MOSFET) are produced using UTC’s proprietary, planar stripe, DMOS technology. 12N60 is simply a three-terminal silicon device with,\u003cspan\u003e \u003c\/span\u003e\u003cspan id=\"f6\"\u003ehigh voltage and high current power\u003cspan\u003e \u003c\/span\u003e\u003c\/span\u003e\u003cspan id=\"f6\"\u003eMOSFET, designed to have better characteristics, such as fast\u003cspan\u003e \u003c\/span\u003e\u003c\/span\u003e\u003cspan id=\"f6\"\u003eswitching time.\u003cspan\u003e \u003c\/span\u003e\u003c\/span\u003eThis advanced technology is specially tailored to\u003cspan\u003e \u003c\/span\u003e\u003cspan id=\"f3\"\u003ereduce and minimize on-state resistance while providing\u003cspan\u003e \u003c\/span\u003e\u003cspan id=\"f6\"\u003ehigh rugged avalanche characteristics,\u003c\/span\u003e\u003cspan\u003e \u003c\/span\u003eand reliable, and fast switching performance\u003c\/span\u003e. These devices are compatible for speed switching applications in power\u003cspan\u003e \u003c\/span\u003e\u003cspan id=\"f6\"\u003esupplies, PWM motor controls, high efficient DC to DC converters,\u003cspan\u003e \u003c\/span\u003e\u003c\/span\u003e\u003cspan id=\"f6\"\u003eand bridge circuits\u003cspan\u003e \u003c\/span\u003e\u003c\/span\u003ebased n half-bridge topology.\u003cspan\u003e \u003c\/span\u003e\u003cspan id=\"f11\"\u003eMoreover, 12N60 features minimum Lot-to-Lot variations for robust device\u003cspan\u003e \u003c\/span\u003e\u003c\/span\u003e\u003cspan id=\"f11\"\u003eperformance and reliable operation.\u003c\/span\u003e\u003c\/p\u003e\n\u003cdiv\u003e\n\u003cp\u003e12N60 N-Channel Mosfet Transistor manufactured in TO-220F package that is universally accepted for all commercial-industrial applications. 12N60 provides a Drain Source Voltage of 600V at a drain current of 0.8A. These MOSFET Transistors are designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.\u003c\/p\u003e\n\u003cp\u003eA MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in  wide range of applications such as in low-voltage (less than 200V) switch.\u003c\/p\u003e\n\u003c\/div\u003e","brand":"Digilog Electronics","offers":[{"title":"Default Title","offer_id":43962500186177,"sku":"b647","price":130.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0727\/2805\/1777\/files\/Mosfet12N60600V12AMOSFETN-ChannelTransistorNewOriginal_0d1e8c5a-051e-44d1-81ec-9f183ec3f0ce.jpg?v=1779558482","url":"https:\/\/stem.pk\/products\/mosfet-12n60-600v-12a-mosfet-n-channel-transistor-new-original","provider":"stem.pk","version":"1.0","type":"link"}