Home Power Electronics Used 80A 650V GWA80H65DFB (STGWA80H65DFB) – IGBT TO‑247-Digilog.pk
75a 650v On Semiconductor 75t65sqdt Igbt With Soft Fast Recovery Diode-digilog.pk Back to Power Electronics Used FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package-Digilog.pk

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Used 80A 650V GWA80H65DFB (STGWA80H65DFB) – IGBT TO‑247-Digilog.pk
Used 80A 650V GWA80H65DFB (STGWA80H65DFB) – IGBT TO‑247-Digilog.pk
Used 80A 650V GWA80H65DFB (STGWA80H65DFB) – IGBT TO‑247-Digilog.pk
Used 80A 650V GWA80H65DFB (STGWA80H65DFB) – IGBT TO‑247-Digilog.pk

Used 80A 650V GWA80H65DFB (STGWA80H65DFB) – IGBT TO‑247-Digilog.pk

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SKU: b150

The GWA80H65DFB, also known by the ST part number STGWA80H65DFB, is a Trench Field‑Stop IGBT engineered for high-speed switching applications. Featuring an integrated ultra-fast soft recovery diode, this device offers superior efficiency in hard-switching environments such as solar inverters, high-frequency converters, motor drives, and UPS systems. The tight parameter distribution and positive saturation voltage temperature coefficient make it optimal for demanding, parallel-operated systems. Its TO‑247 long-lead package provides robust thermal handling and easy heatsink integration

Key Specifications

Parameter Value
Collector–Emitter Voltage (V<sub>CES</sub>) 650 V static6.arrow.com+6st.com+6alltransistors.com+6
Continuous Collector Current (I<sub>C</sub>) 80 A @ 100 °C (120 A @ 25 °C)
Pulsed Collector Current 300 A (1 µs pulses)
Saturation Voltage (V<sub>CE(sat)</sub>) 1.6 V typical @ 80 A
Gate–Emitter Voltage (V<sub>GE</sub>) ±20 V (±30 V transient)
Maximum Junction Temperature (T<sub>j</sub>) 175 °C
Thermal Resistance R<sub>θJC</sub>(IGBT)=0.32 °C/W, diode=0.66 °C/W
Switching Energy E<sub>on</sub> ≈2.1 mJ, E<sub>off</sub> ≈1.5 mJ @ 80 A
Gate Charge (Q<sub>g</sub>) ~414 nC

Features & Benefits

  • Designed with advanced Trench Field‑Stop technology for a balanced trade-off between conduction and switching losses

  • Fast recovery diode enables efficient operation in high-frequency circuits

  • Low V<sub>CE(sat)</sub> minimizes conduction losses

  • High thermal tolerance and safe paralleling due to positive V<sub>CE(sat)</sub> temperature coefficient and tight specifications

  • TO‑247 long‑lead package supports robust thermal performance and easy heatsinking

Common Applications

  • Solar string and central inverters

  • AC–DC converters and PFC stages

  • Motor drives and high-power variable-frequency drives

  • UPS systems, welding inverters, and industrial power supplies

Package includes:
1 x Used 80A 650V GWA80H65DFB (STGWA80H65DFB) –  IGBT TO‑247

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